ISRONIX is developing an advanced GaAs-on-SiC integration platform designed
to overcome thermal limitations in high-power RF semiconductor devices.
Our technology focuses on engineering the GaAs–SiC interface to enable efficient
its heat extraction, higher power density, and improved device performance.
Our goal is to establish a scalable semiconductor integration platform for
the next generation RF and high-frequency applications.
Developing the materials, interfaces, and wafer-level integration processes needed to advance GaAs-on-SiC technology toward device-level validation.
Conventional GaAs RF devices face increasing thermal challenges
as power density rises.
ISRONIX is engineering the GaAs–SiC interface and wafer-level bonding processes to establish an efficient thermal path from
the active device region into the SiC substrate.
Our development focuses on interface quality, integration reliability, and process reproducibility as key steps toward device-level validation.
